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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Investigation on the reliability corner of pMOSFETs with drain-bias-dependent NBTI degradation
He, Yandong, Zhang, Ganggang, Duan, XiaorongYear:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667309
File:
PDF, 316 KB
english, 2010