[IEEE 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Phoenix, AZ, USA (2007.04.15-2007.04.19)] 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - The Influence of Gate Poly-Silicon Oxidation on Negative Bias Temperature Instability in 3D FinFET
Lee, Hyunjin, Lee, Choong-Ho, Park, Donggun, Choi, Yang-KyuYear:
2007
Language:
english
DOI:
10.1109/relphy.2007.369567
File:
PDF, 2.48 MB
english, 2007