[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - 100GHz depletion-mode Ga2O3/GaN single nanowire MOSFET by photo-enhanced chemical oxidation method
Jeng-Wei Yu,, Wu, Yuh-Renn, Jian-Jang Huang,, Peng, Lung-HanYear:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703450
File:
PDF, 1.01 MB
english, 2010