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1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor
Olsson, J., Rorsman, N., Vestling, L., Fager, C., Ankarcrona, J., Zirath, H., Eklund, K.-H.Volume:
23
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.992840
Date:
April, 2002
File:
PDF, 182 KB
english, 2002