Required Donor Concentration of Epitaxial Layers for...

Japanese Journal of Applied Physics 1980 / 4 Vol. 19; Iss. 4

Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes

Takanashi, Yoshifumi, Kawashima, Minoru, Horikoshi, Yoshiji
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Volume:
19
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.19.693
Date:
April, 1980
File:
PDF, 1.04 MB
1980
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