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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping
Rommel, S. L., Pawlik, D., Thomas, P., Barth, M., Johnson, K., Kurinec, S. K., Seabaugh, A., Cheng, Z., Li, J. Z., Park, J.S., Hydrick, J.M., Bai, J., Carroll, M., Fiorenza, J.G., Lochtefeld, A.Year:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796801
File:
PDF, 1.95 MB
english, 2008