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[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Characterization of the low temperature activated P+/N junction formed by implant into silicide method
Kow-Ming Chang,, Jian-Hong Lin,, Chih-Hsiang Yang,Year:
2007
Language:
english
DOI:
10.1109/isdrs.2007.4422558
File:
PDF, 184 KB
english, 2007