[IEEE 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD) - Grenoble, France (2012.09.24-2012.09.26)] 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs
Theodorou, C. G., Ioannidis, E. G., Haendler, S., Planes, N., Arnaud, F., Andrieu, F., Poiroux, T., Faynot, O., Jomaah, J., Dimitriadis, C. A., Ghibaudo, G.Year:
2012
Language:
english
DOI:
10.1109/iscdg.2012.6360011
File:
PDF, 939 KB
english, 2012