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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - 14 nm gate length CMOSFETs utilizing low thermal budget process with poly-SiGe and Ni salicide
Hokazono, A., Ohuchi, K., Takayanagi, M., Watanabe, Y., Magoshi, S., Kato, Y., Shimizu, T., Mori, S., Oguma, H., Sasaki, T., Yoshimura, H., Miyano, K., Yasutake, N., Suto, H., Adachi, K., Fukui, H., WYear:
2002
Language:
english
DOI:
10.1109/iedm.2002.1175920
File:
PDF, 251 KB
english, 2002