[IEEE Extended Abstracts of the Third International Workshop on Junction Technology. IWJT - Tokyo, Japan (2002.12.3-2002.12.3)] Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. - 55nm gate CMOS technology using sub-keV ion implantation without through surface oxide
Sayama, H., Miyoshi, H., Kawasaki, Y., Ota, K., Oda, H., Kuroi, T., Eimori, T., Morimmo, H., Nakauka, H., Fuse, G., Nakanishi, K., Sebe, A., Kishimoto, T., Yamada, T., Kajiya, A., Mayumi, S.Year:
2002
Language:
english
DOI:
10.1109/iwjt.2002.1225216
File:
PDF, 135 KB
english, 2002