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[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability
Degraeve, R., Pangon, N., Kaczer, B., Nigam, T., Groeseneken, G., Naem, A.Year:
1999
Language:
english
DOI:
10.1109/vlsit.1999.799339
File:
PDF, 169 KB
english, 1999