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Variable I–V characteristics method applied to model the electrical behavior of an irradiated P–N junction. Extension to the junction in an irradiated transistor
Sudre, C., Pelanchon, F.Volume:
138
Language:
english
Journal:
Radiation Effects and Defects in Solids
DOI:
10.1080/10420159608211505
Date:
January, 1996
File:
PDF, 408 KB
english, 1996