[IEEE 2010 IEEE 3rd International Nanoelectronics...

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[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Effect of annealing on the gate effective work-function modulation for the Al/TiN/SiO2/P-Si structure

Xiaorong Wang,, Bingzong Li,, Guoping Ru,, Xinping Qu,, Yulong Jiang,
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Year:
2010
Language:
english
DOI:
10.1109/inec.2010.5425139
File:
PDF, 103 KB
english, 2010
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