Nanofabrication of high aspect ratio (∼50:1) sub-10 nm...

Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching

Mirza, Muhammad M., Zhou, Haiping, Velha, Philippe, Li, Xu, Docherty, Kevin E., Samarelli, Antonio, Ternent, Gary, Paul, Douglas J.
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Volume:
30
Year:
2012
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4755835
File:
PDF, 1.78 MB
english, 2012
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