Bonding structure and defects in wide band gap a-Si...

Bonding structure and defects in wide band gap a-Si 1− x C x :H films deposited in Hz diluted SiH 4 + CH 4 gas mixtures

Demichelis, F., Giorgis, F., Pirri, C. F., Tresso, E.
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Volume:
71
Language:
english
Journal:
Philosophical Magazine Part B
DOI:
10.1080/01418639508243603
Date:
May, 1995
File:
PDF, 902 KB
english, 1995
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