Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions
Akimchenko, I. P., Kisseleva, K. V., Krasnopevtsev, V. V., Touryanski, A. G., Vavilov, V. S.Volume:
48
Language:
english
Journal:
Radiation Effects
DOI:
10.1080/00337578008209220
Date:
January, 1980
File:
PDF, 385 KB
english, 1980