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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)
Cheng, Ran, Liu, Bin, Guo, Pengfei, Yang, Yue, Zhou, Qian, Gong, Xiao, Dong, Yuan, Tong, Yi, Bourdelle, Konstantin, Daval, Nicolas, Delprat, Daniel, Nguyen, Bich-Yen, Augendre, Emmanuel, Yeo, Yee-ChiaYear:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724699
File:
PDF, 1.94 MB
english, 2013