Electrical properties of thermally oxidized...

Journal of Applied Physics 2011 Vol. 110; Iss. 8

Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

Eickelkamp, M., Weingarten, M., Rahimzadeh Khoshroo, L., Ketteniss, N., Behmenburg, H., Heuken, M., Donoval, D., Chvála, A., Kordoš, P., Kalisch, H., Vescan, A.
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Volume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3647589
File:
PDF, 1011 KB
english, 2011
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