![](/img/cover-not-exists.png)
Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
Strel'chuk, Anatoly M., Kalinina, Evgenia V.Volume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.740-742.565
Date:
January, 2013
File:
PDF, 345 KB
english, 2013