Recombination and Excess Currents in 4H-SiC Structure with...

Materials Science Forum 2013 / 1 Vol. 740-742

Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region

Strel'chuk, Anatoly M., Kalinina, Evgenia V.
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Volume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.740-742.565
Date:
January, 2013
File:
PDF, 345 KB
english, 2013
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