THRESHOLD AND SATURATION VOLTAGES MODELING OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNT-FETs)
MARULANDA, JOSE M., SRIVASTAVA, ASHOK, SHARMA, ASHWANI K.Volume:
3
Language:
english
Journal:
Nano
DOI:
10.1142/s1793292008000952
Date:
June, 2008
File:
PDF, 194 KB
english, 2008