Characterization of Deep Levels in Semi-Insulating GaAs...

Japanese Journal of Applied Physics 1983 / 6 Vol. 22; Iss. Part 2, No

Characterization of Deep Levels in Semi-Insulating GaAs Crystals by a Spectroscopic Photoelectrochemical Current

Otsubo, Mutsuyuki, Murotani, Toshio
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Volume:
22
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.22.l345
Date:
June, 1983
File:
PDF, 361 KB
1983
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