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Electrical Properties of Si-Doped Al x Ga 1- x As Layers Grown by MBE
Ishikawa, Tomonori, Saito, Junji, Sasa, Shigehiko, Hiyamizu, SatoshiVolume:
21
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.21.L675
Date:
November, 1982
File:
PDF, 293 KB
1982