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N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator
Chiu, Hsien-Chin, Wu, Chia-Hsuan, Chi, Ji-Fan, Chyi, J.-I., Lee, G.-Y.Volume:
55
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.09.026
Date:
January, 2015
File:
PDF, 753 KB
english, 2015