Microstructural properties of GaN grown on a Si(110)...

Current Applied Physics 2015 / 03 Vol. 15; Iss. 3

Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux

Lee, Jong Hoon, Ryu, Hyun, Ahn, Sang Jung, Noh, Young-Kyun, Oh, Jae-Eung, Kim, Young Heon
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Volume:
15
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2014.12.017
Date:
March, 2015
File:
PDF, 1.49 MB
english, 2015
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