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A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors
Zhao, Jingtao, Lin, Zhaojun, Luan, Chongbiao, Chen, Quanyou, Yang, Ming, Zhou, Yang, Lv, Yuanjie, Feng, ZhihongVolume:
79
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2014.12.013
Date:
March, 2015
File:
PDF, 920 KB
english, 2015