[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Material Properties and Applications of Ge1-xSnx Alloys for Ge Nanoelectronics
Nakatsuka, Osamu, Shimura, Yosuke, Takeuchi, Wakana, Taoka, Noriyuki, Zaima, ShigeakiYear:
2012
Language:
english
DOI:
10.1109/istdm.2012.6222485
File:
PDF, 925 KB
english, 2012