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On the nature of the radiation defects with level E c –0.22 eV in n-type silicon
Kazakevich, L. A., Kuznetsov, V. I., Lugakov, P. F.Volume:
87
Language:
english
Journal:
Radiation Effects
DOI:
10.1080/01422448608209715
Date:
January, 1985
File:
PDF, 380 KB
english, 1985