High-Quality InGaAs Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Using a Vertical Reactor
Oishi, Mamoru, Nojima, Shunji, Kuroiwa, KoichiVolume:
23
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.23.L625
Date:
August, 1984
File:
PDF, 380 KB
1984