Improved Threshold Voltage Uniformity in GaAs MESFET Using...

Japanese Journal of Applied Physics 1984 / 5 Vol. 23; Iss. Part 2, No

Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation

Sano, Yoshiaki, Nakamura, Hiroshi, Akiyama, Masahiro, Egawa, Takashi, Ishida, Toshimasa, Kaminishi, Katsuzo
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Volume:
23
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.23.l290
Date:
May, 1984
File:
PDF, 365 KB
1984
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