Deep Electron Traps in Undoped GaAs Grown by MOCVD

Japanese Journal of Applied Physics 1984 / 5 Vol. 23; Iss. Part 2, No

Deep Electron Traps in Undoped GaAs Grown by MOCVD

Hashizume, Tamotsu, Ikeda, Eiji, Akatsu, Yuji, Ohno, Hideo, Hasegawa, Hideki
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Volume:
23
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.23.l296
Date:
May, 1984
File:
PDF, 371 KB
1984
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