Room Temperature Operation of 650 nm AlGaAs...

Japanese Journal of Applied Physics 1985 / 2 Vol. 24; Iss. Part 2, No

Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy

Saku, Tadashi, Iwamura, Hidetoshi, Hirayama, Yoshiro, Suzuki, Yoshifumi, Okamoto, Hiroshi
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L73
Date:
February, 1985
File:
PDF, 456 KB
1985
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