Growth of Single Domain GaAs on 2-inch Si(100) Substrate by...

Japanese Journal of Applied Physics 1985 / 6 Vol. 24; Iss. Part 2, No

Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy

Nishi, Seiji, Inomata, Hiroki, Akiyama, Masahiro, Kaminishi, Katsuzo
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L391
Date:
June, 1985
File:
PDF, 1.44 MB
1985
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