Silicon Doping in InP Grown by Metalorganic Vapor Phase...

Japanese Journal of Applied Physics 1985 / 5 Vol. 24; Iss. Part 2, No

Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using Silane

Oishi, Mamoru, Nojima, Shunji, Asahi, Hajime
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L380
Date:
May, 1985
File:
PDF, 324 KB
1985
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