Electron Traps due to Defect-Impurity Complexes Induced by...

Japanese Journal of Applied Physics 1985 / 5 Vol. 24; Iss. Part 2, No

Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate

Yamamoto, Norio, Hasegawa, Fumio, Onomura, Masaaki, Nannichi, Yasuo
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L326
Date:
May, 1985
File:
PDF, 471 KB
1985
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