Electronic States in Selectively Si-Doped...

Japanese Journal of Applied Physics 1985 / 4 Vol. 24; Iss. Part 2, No

Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE

Sasa, Shigehiko, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori, Hiyamizu, Satoshi, Inoue, Masataka
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L281
Date:
April, 1985
File:
PDF, 439 KB
1985
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