Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by...

Japanese Journal of Applied Physics 1985 / 8 Vol. 24; Iss. Part 2, No

Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy

Ogawa, Masaki, Baba, Toshio
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.24.l572
Date:
August, 1985
File:
PDF, 513 KB
1985
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