Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
Sasa, Shigehiko, Muto, Shunichi, Kondo, Kazuhiro, Ishikawa, Hideaki, Hiyamizu, SatoshiVolume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.24.l602
Date:
August, 1985
File:
PDF, 418 KB
1985