Surface Defect Formation in GaAs Layers Grown on...

Japanese Journal of Applied Physics 1985 / 7 Vol. 24; Iss. Part 2, No

Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy

Watanabe, Nozomu, Fukunaga, Toshiaki, Kobayashi, Keisuke L. I., Nakashima, Hisao
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L498
Date:
July, 1985
File:
PDF, 1.03 MB
1985
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