MBE Growth of High-Quality GaAs Using Triethylgallium as a...

Japanese Journal of Applied Physics 1986 / 1 Vol. 25; Iss. Part 2, No

MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source

Kondo, Kazuhiro, Ishikawa, Hideaki, Sasa, Shigehiko, Sugiyama, Yoshihiro, Hiyamizu, Satoshi
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Volume:
25
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.25.l52
Date:
January, 1986
File:
PDF, 272 KB
1986
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