Gate Length Dependence of Electron Drift Velocity in the...

Japanese Journal of Applied Physics 1985 / 11 Vol. 24; Iss. Part 1, No

Gate Length Dependence of Electron Drift Velocity in the High Field Channel of InP MESFETs

Ishibashi, Tadao, Imai, Yuhki, Idda, Masao
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.1573
Date:
November, 1985
File:
PDF, 298 KB
1985
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