Growth Condition Independence Observed for DX Center in...

Japanese Journal of Applied Physics 1985 / 11 Vol. 24; Iss. Part 2, No

Growth Condition Independence Observed for DX Center in Si-doped AlGaAs Grown by Molecular Beam Epitaxy

Ashizawa, Yasuo, Watanabe, Miyoko Oku
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L883
Date:
November, 1985
File:
PDF, 313 KB
1985
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