Growth of a (GaAs) n...

Japanese Journal of Applied Physics 1985 / 9 Vol. 24; Iss. Part 2, No

Growth of a (GaAs) n /(InAs) n Superlattice Semiconductor by Molecular Beam Epitaxy

Ohno, Hideo, Katsumi, Ryuichi, Takama, Toshihiko, Hasegawa, Hideki
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.24.l682
Date:
September, 1985
File:
PDF, 454 KB
1985
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