A Molecular and Ion-Beam Epitaxy System for the Growth of...

Japanese Journal of Applied Physics 1985 / 9 Vol. 24; Iss. Part 1, No

A Molecular and Ion-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Ion Beam

Shimizu, Saburo, Tsukakoshi, Osamu, Komiya, Souji, Makita, Yunosuke
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.1130
Date:
September, 1985
File:
PDF, 2.75 MB
1985
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