Low Interface Recombination Velocity in GaAs-(Al, Ga)As...

Japanese Journal of Applied Physics 1985 / 9 Vol. 24; Iss. Part 2, No

Low Interface Recombination Velocity in GaAs-(Al, Ga)As Double Heterostructures Grown by Metal Organic Vapour Phase Epitaxy

Hooft, G. W.'t, Leys, M. R., Roozeboom, F.
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L761
Date:
September, 1985
File:
PDF, 409 KB
1985
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