Misfit Dislocation Generation for MBE Grown GaAs on...

Japanese Journal of Applied Physics 1985 / 9 Vol. 24; Iss. Part 2, No

Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs Substrates

Shinohara, Masanori, Ito, Tomonori, Yamada, Kohji, Imamura, Yoshihiro
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L711
Date:
September, 1985
File:
PDF, 894 KB
1985
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