Threshold Voltage Behavior for WSi/Al x...

Japanese Journal of Applied Physics 1985 / 8 Vol. 24; Iss. Part 2, No

Threshold Voltage Behavior for WSi/Al x Ga 1- x As/GaAs MIS-Like Heterostructure FET

Arai, Kunihiro, Mizutani, Takashi, Yanagawa, Fumihiko
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.24.l623
Date:
August, 1985
File:
PDF, 461 KB
1985
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