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Performance of GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Regrown n + -Source/Drain on a Selectively Etched GaN
Kim, Do-Kywn, Kim, Dong-Seok, Chang, Sung-Jae, Lee, Chang-Ju, Bae, Youngho, Cristoloveanu, Sorin, Lee, Jung-Hee, Hahm, Sung-HoVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.061001
Date:
June, 2013
File:
PDF, 1.38 MB
english, 2013