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Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique
Yao, Yao, He, Zhiyuan, Yang, Fan, Shen, Zhen, Zhang, Jincheng, Ni, Yiqiang, Li, Jin, Wang, Shuo, Zhou, Guilin, Zhong, Jian, Wu, Zhisheng, Zhang, Baijun, Ao, Jinping, Liu, YangVolume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.7.016502
Date:
January, 2014
File:
PDF, 1.24 MB
english, 2014