Alternation of band gap and localization of excitons in...

Nanotechnology 2008 / 08 Vol. 19; Iss. 31

Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content

Gholami, M, Haratizadeh, H, Esmaeili, M, Amiri, R, Holtz, P O, Hammar, M
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Volume:
19
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/19/31/315705
Date:
August, 2008
File:
PDF, 1.04 MB
english, 2008
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