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Characteristics of high responsivity 8.5 μm InGaAs/InP QWIPs grown by metalorganic vapour phase epitaxy
B.M. Arora, A. Majumdar, A.P. Shah, M.R. Gokhale, S. Ghosh, A. Bhattacharya, D. SenguptaVolume:
50
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.infrared.2006.10.002
File:
PDF, 266 KB
english, 2007